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RF MOSFET Transistor - RD06HHF1

RF MOSFET Transistor

Item No.: RD06HHF1
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Supplier Details
Country: Taiwan
City: Taipei
Address: Chi-Lin Rd.
TEL: +886-2-21234567
Fax: +886-2-11115566
Online Showroom: 104 Products
• RD06HHF1 is a MOS FET type transistor specifically designed for HF RF Power amplifiers applications
• RF MOSFET Transistor
• Silicon Power RF Transistors
• High Frequency Devices
• 12.5V
Operation High Output Power Si MOS FET
• Metal-Oxide-Semiconductor
Field-Effect Transistors , MOSFET
• Silicon RF devices are widely
used in portable wireless communication devices that operate in the
frequency band under 1GHz in order to amplify their transmission power
• Features: High Power Gain: Pout > 6W, Gp > 16dB @Vdd = 12.5V, f = 30MHz
• Applications: For output stage of high power amplifiers in HF band mobile radio sets
• Input Power(Pin): 0.3W(Zg = Z1 = 50Ω)
• Drain Current(ID): 3A
• Gate to Source Voltage(VGSS): ±20V(Vds = 0V)
• Drain to Source Voltage(VDSS): 50V(Vgs = 0V)
• Channel Dissipation(Pch): 27.8W(Tc = 25°C)
• Drain Cutoff Current(IDSS)(Max): 10μA(VDS = 17V , VGS = 0V)
• Gate Cutoff Current(IGSS)(Max): 1μA(VGS = 10V , VDS = 0V)
• Gate Threshold Voltage(VTH)(Min): 1.9V(VDS = 12V , IDS = 1mA)
• Gate Threshold Voltage(VTH)(Max): 4.9V(VDS = 12V , IDS = 1mA)
• Output Power(Pout)(Min): 6W(VDD = 12.5V , Pin = 0.15W , f = 30MHz , Idq = 0.5A)
• Output Power(Pout)(TYP): 10W(VDD = 12.5V , Pin = 0.15W , f = 30MHz , Idq = 0.5A)
• Drain Efficiency(ηD)(Min): 55%(VDD = 12.5V , Pin = 0.15W , f = 30MHz , Idq = 0.5A)
• Drain Efficiency(ηD)(TYP): 65%(VDD = 12.5V , Pin = 0.15W , f = 30MHz , Idq = 0.5A)
• Channel Temperature(Tch): 150°C
• Storage Temperature(Tstg): -40°C to +150°C
• Brand Name: MITSUBISHI
• Lead-Free Type
• RoHS Compliant
• Mounting Type: Through Hole / DIP(Dual in -line package)
• Package Outline: TO-220S
• Lead Count: 3
• Packing: 50 units / tube
• HF / VHF / UHF / 900MHz Part Number: RD00HHS1 , RD00HVS1 , RD01MUS1 , RD01MUS2 , RD01MUS2B , RD02MUS1 , RD02MUS1B , RD02MUS2 , RD04HMS2 , RD05MMP1 , RD06HHF1 , RD06HVF1 , RD07MUS2B , RD07MVS1 , RD07MVS1B , RD07MVS2 , RD09MUP2 , RD100HHF1 , RD12MVP1 , RD12MVS1 , RD15HVF1 , RD16HHF1 , RD20HMF1 , RD30HUF1 , RD30HVF1 , RD35HUF2 , RD45HMF1 , RD60HUF1 , RD70HHF1 , RD70HUF2 , RD70HVF1
• Compatible with many other wireless communication products
• Mass stock on-hand merchandise supply
• We supply various electronic components and welcome your inquiries
We have been successful in establishing our brand and sale to the international market due to our excellent quality and service of

RF MOSFET Transistor

. Delivering the best quality products conforming to the cultural needs of the client is the ultimate goal of us.